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ECEN 3320 - Semiconductor Devices


Catalog Data ECEN 3320 (3). Semiconductor Devices. Highlights the fundamentals of semiconductor materials and devices. Topics include the electrical and optical properties of semiconductors, the theory of PN junctions, bipolar and field-effect transistors, and optoelectronic devices.
Credits and Design 3 credit hours. Elective course.
Prerequisite(s) ECEN 3250, Microelectronics
Corequisite(s) None.
Instructor(s) Wounjhang Park, Bart Van Zeghbroeck.
Textbook Bart Van Zeghbroeck, Principles of Semiconductor Devices (at http://ecee.colorado.edu/~bart/book/).
  
Course Objectives For students to:
  1. To understand the charge carrier dynamics and electric currents in semiconductors.
  2. To understand the basic operating principles and issues of diodes (both pn and Schottky diodes).
  3. To understand the basic operating principles and issues of transistors (both bipolar junction transistors and field effect transistors).
Learning Outcomes After taking this course students will be able to recognize and use the following concepts, ideas, and/or tools:
  1. Energy band theory for semiconductors, including recognition of energy band diagrams and relating energy band structures to semiconductor device functions.
  2. Electrostatic behavior of semiconductors, including setting up Poisson's equation.
  3. Current characteristics of semiconductors, including setting up continuity equations.
Student Outcomes
Addressed
3a 3b 3c 3d 3e 3f 3g1 3g2 3h 3i 3j 3k
Math
/Sci
Exper-
iments
Design Teams Engr
Problems
Respon-
sibility
Oral Written Engr Solns
Impact
LL
Learning
Contem-
porary
Tools
H   M   M             M
Topics Covered
  1. Crystal structure
  2. Energy band structure
  3. Carrier statistics
  4. Intrinsic and extrinsic semiconductors
  5. Drift and diffusion current
  6. Generation and recombination of carriers
  7. Continuity equation
  8. pn Junction
  9. Optoelectronic devices
  10. Schottky diode
  11. Ohmic contact
  12. Bipolar junction transistor
  13. Metal-oxide-semiconductor (MOS) device
  14. MOS field-effect transistor

Last revised: 05-18-11, PM, ARP