Appendix: 

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Appendix 3: Material Parameters print file in PDF format

Name

Symbol

Germanium

Silicon

Gallium Arsenide

Bandgap energy at 300 K

Eg (eV)

0.66

1.12

1.424

Breakdown Field

Ebr (V/cm)

105

3 x 105 *

4 x 105

Density

(g/cm3)

5.33

2.33

5.32

Effective density of states in the conduction band at 300 K

Nc (cm-3)

1.02 x 1019

2.82 x 1019

4.35 x 1017

Effective density of states in the valence band at 300 K

Nv (cm-3)

5.65 x 1018

1.83 x 1019

7.57 x 1018

Intrinsic concentration at 300 K

ni (cm-3)

2.8 x 1013

1.0 x 1010

2.0 x 106

Effective mass for density of states calculations

 

 

 

 

            Electrons

me* / m0

0.55

1.08

0.067

            Holes

mh* / m0

0.37

0.81

0.45

Electron affinity

χ (V)

4.0

4.05

4.07

Lattice constant

a (pm)

564.613

543.095

565.33

Mobility at 300 K (undoped)

 

 

 

 

            Electrons

μn (cm2/V-s)

3900

1400

8800

            Holes

μp (cm2/V-s)

1900

450

400

Relative dielectric constant

εs/ ε0

16

11.9

13.1

Thermal conductivity at 300 K

κ (W/cmK)

0.6

1.5

0.46

Refractive index at 632.8 nm wavelength

n

5.441

- i 0.785

3.875

- i 0.0181

3.856

- i 0.196

 

*See also section 4.5.1: Breakdown field in silicon at 300 K

See also section 2.7.2: Mobility of doped silicon at 300 K