Chapter 4: p-n Junctions |
An abrupt silicon p-n junction consists of a p-type region containing 2 x 10^{16} cm^{-3} acceptors and an n-type region containing also 10^{16} cm^{-3} acceptors in addition to 10^{17} cm^{-3} donors. | |
An abrupt silicon (n_{I} = 10^{10} cm^{-3}) p-n junction consists of a p-type region containing 10^{16} cm^{-3} acceptors and an n-type region containing 5 x 10^{16} cm^{-3} donors.
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Consider an abrupt p-n diode with N_{a} = 10^{18} cm^{-3} and N_{d} = 10^{16} cm^{-3}. Calculate the junction capacitance at zero bias. The diode area equals 10^{-4} cm^{2}. Repeat the problem while treating the diode as a one-sided diode and calculate the relative error. | |
An abrupt silicon p-n junction (N_{a} = 10^{16} cm^{-3} and N_{d} = 4 x 10^{16} cm^{-3}) is biased with V_{a} = 0.6 V. Calculate the ideal diode current assuming that the n-type region is much smaller than the diffusion length with w_{n}^{'} = 1 mm and assuming a "long" p-type region. Use m_{n} = 1000 cm^{2}/V-s and m_{p} = 300 cm^{2}/V-s. The minority carrier lifetime is 10 ms and the diode area is 100 mm by 100 mm. | |
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A 1 cm^{2} silicon solar cell has a saturation current of 10^{-12} A and is illuminated with sunlight yielding a short-circuit photocurrent of 25 mA. Calculate the solar cell efficiency and fill factor. |