Chapter 7: Glossary
The variation of the threshold voltage of an FET due to a variation of the substrate or bulk voltage. See also Body Effect
Ion implantation in the channel region used to adjust the threshold voltage of a MOSFET.
Variation of the channel due to an increase of the depletion region when increasing the drain voltage. A reduction of the channel yields a higher current.
Complementary metal oxide silicon (transistor)
Transistor, which is normally on if the gate is connected to the source
Drain induced barrier lowering
Contact region of a MOSFET to which the electrons in the channel flow
Dynamic random access memory
Electrically alterable programmable read only memory
Erasable electrically programmable read only memory
Transistor, which is normally off if the gate is connected to the source.
Electrically programmable read only memory
Floating gate Avalanche injection Metal Oxide Silicon (transistor)
Field Effect Transistor
Electrode of an FET, which controls the charge in the channel
High current state of a CMOS circuit caused by the parasitic bipolar transistors
Low doped drain transistor structure
Local oxidation used to isolate two adjacent devices.
Metal-Oxide-Semiconductor Field Effect Transistor. See also MOSFET
Capacitance between the gate and the source/drain due to the overlap between the gate and the source/drain regions.
Breakdown mechanism caused by the overlap between the source and drain depletion regions
Random access memory
Contact region of a MOSFET from which the electrons in the channel originate
Transistor current when biased below threshold
The gate-source voltage at which a transistor starts to conduct.
A MOSFET model which includes the variable depletion layer width between the inversion layer and the substrate
Doped region of opposite doping type used in a CMOS process