 Consider an ntype MOSFET, which consists of a 10 nm thick oxide (e_{r} = 3.9) and has a gate length of 1 micron, a gate width of 20 micron and a threshold voltage of 1.5 Volt. Calculate the resistance of the MOSFET in the linear region as measured between source and drain when applying a gatesource voltage of 3 Volt. What should the gatesource voltage be to double the resistance? The surface mobility of the electrons is 300 cm^{2}/Vsec.
 Consider an ntype MOSFET with an oxide thickness t_{ox} = 20 nm (e_{r} = 3.9) and a gate length, L = 1 micron, a gate width, W = 10 micron and a threshold voltage, V_{T} = 1 Volt. Calculate the capacitance per unit area of the oxide, C_{OX}, and from it the capacitance of the gate, C_{G}. Calculate the drain current, I_{D}, at a gatesource voltage, V_{GS} = 3 Volt and a drainsource voltage, V_{DS} = 0.05 Volt. The surface mobility of the electrons m_{n} = 300 cm^{2}/Vsec. Use the linear model of the MOSFET.
 A MOSFET (L = 1 mm, t_{ox} = 15 nm, V_{T} = 1 V and mn = 300 cm^{2}/Vsec) must provide a current of 20 mA at a drainsource voltage of 0.5 Volt and a gatesource voltage of 5 Volt. How wide should the gate be?
 A MOSFET (L = 1 mm, t_{ox} = 10 nm, V_{T} = 1 V and m_{n} = 300 cm^{2}/Vsec) is to be used as 50 W terminating resistor when applying a gatesource voltage, V_{GS} = 5 Volt. How wide should the gate be?
 The capacitance of an ntype silicon MOSFET is 1 pF. Provided that the oxide thickness is 50 nm and the gatelength is 1 micron, what is the resistance of the MOSFET in the linear regime when biased at a gate voltage which is 5 Volt larger than the threshold voltage? Use a reasonable value for the surface mobility knowing that the bulk mobility equals 1400 cm^{2}/Vsec.
 Consider a pchannel silicon MOSFET with an aluminum gate.
 Draw the energy band diagram of the MOS structure for V_{G} = V_{FB}. Indicate the workfunction of the metal and the semiconductor, as well as the electron affinity.
 Draw the field distribution for V_{G} = V_{T} (onset of inversion).
 Calculate the depletion layer width and the field in the oxide at the onset of inversion. (N_{d} = 10^{16} cm^{3}, t_{ox} = 100 nm, V_{FB} = 0.5V)
 Calculate the depletion region width within a ptype bulk silicon MOS capacitor with N_{d} = 10^{17} cm^{3}, at the onset of inversion.
 A silicon psubstrate (N_{a} = 10^{16} cm^{3}) MOSFET with t_{ox} = 0.1 m_{m}, e_{ox}/e_{0} = 3.9 and a negative interface charge per unit area of 10^{8} C/cm^{2}, has a threshold voltage which is 1 Volt smaller than desired. By what value should one change the oxide thickness to obtain the desired threshold voltage? Should one increase or decrease the oxide thickness?
 A silicon MOSFET (n_{I} = 10^{10} cm^{3}, e_{s}/e_{0} = 11.9 and e_{ox}/e_{0} = 3.9) is scaled by reducing all dimensions by a factor of 2 and by increasing the doping density of the substrate by a factor of 4.
Calculate the ratio of the following parameters of the scaled device relative to that of the original device: (make approximations if necessary)  The transconductance at V_{GS}  V_{T} = 1 V.
 The gate capacitance
 The transit frequency at
 V
_{GS}  V_{T} = 1 V. (Assume that C_{DS} = 0) The threshold shift when increasing the reverse bias of the sourcebulk diode from 1 Volt to 3 Volt.
 The breakdown voltage of the oxide assuming the breakdown field to be constant.
 The breakdown voltage of the draintobulk pn diode assuming the breakdown field to be constant.
 A silicon psubstrate (N_{a} = 10^{16} cm^{3}) MOSFET with t_{ox} = 0.1 m_{m}, e_{ox}/e_{0} = 3.9 and V_{FB} = 0.2 V, has a threshold voltage which is 1 Volt smaller than desired. By what value should one change the oxide thickness, t_{ox}, to obtain the desired threshold voltage? Should one increase or decrease the oxide thickness?
