ECEN3320 EXAM #3: equation sheet

Equation sheet: Exam #3: Wednesday 11/26/97

Webbook versus Neaman symbols

Built-in potential: V_bi = f_i
Reverse bias voltage: V_R = - V_a
Maximum depletion layer width: x_d,max = x_d,T
Electronic charge: q = e
Fixed charge at the oxide-semiconductor interface: Q_f = Q_ss
Net recombination rate: U_n = R_n'
Intrinsic Fermi energy: E_i = E_Fi
Quasi-Fermi energies: F_n = E_Fn and F_p = E_Fp

Intrinsic and doped semiconductors

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Carrier diffusion - Diffusion equations

The p-n diode - Electrostatics

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The "ideal" p-n diode current

"Long" diode

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"Short" diode

MOS capacitance

MOSFET: Linear model

MOSFET: Quadratic model

MOSFET: Variable depletion layer model

MOSFET: The body effect

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© Bart J. Van Zeghbroeck, 1997

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