Answer:
Name | Symbol | Germanium | Silicon | Gallium Arsenide |
---|---|---|---|---|
Energy bandgap at 300 K | E_{g} (eV) | 0.66 | 1.12 | 1.424 |
Effective mass for density of states calculations | ||||
Electrons | m_{e}^{*}_{,dos}/m_{0} | 0.56 | 1.08 | 0.067 |
Holes | m_{h}^{*}_{,dos}/m_{0} | 0.29 | 0.81 | 0.47 |
Effective density of states in the conduction band at 300 K | N_{C} (cm^{-3}) | 1.05 x 10^{19} | 2.82 x 10^{19} | 4.37 x 10^{17} |
Effective density of states in the valence band at 300 K | N_{V} (cm^{-3}) | 3.92 x 10^{18} | 1.83 x 10^{19} | 8.68 x 10^{18} |
Intrinsic carrier density at 300 K | n_{i} (cm^{-3}) | 1.83 x 10^{13} | 8.81 x 10^{9} | 2.03 x 10^{6} |
Effective density of states in the conduction band at 100 ° C (373.15 K) | N_{C} (cm^{-3}) | 1.46 x 10^{19} | 3.91 x 10^{19} | 6.04 x 10^{17} |
Effective density of states in the valence band at 100 ° C | N_{V} (cm^{-3}) | 5.44 x 10^{18} | 2.54 x 10^{19} | 1.12 x 10^{19} |
Intrinsic carrier density at 100 ° C | n_{i} (cm^{-3}) | 3.1 x 10^{14} | 8.55 x 10^{11} | 6.24 x 10^{8} |