Examples

Mobility, effective mass and scattering time - Section - Ex001
Carrier velocity and transit time - Section - Ex002
Conductivity and resistivity - Section - Ex003
Resistance, conductivity and carrier density - Section - Ex004
Mobility due to lattice and impurity scattering - Section - Ex005
Doping dependence of the mobility - Section - Ex006
Linear model of the MOSFET - Section - Ex007
The MOSFET as a voltage controlled resistor - Section - Ex008
Wavelength of a photon and an electron - Section - Ex009
Photon energy, frequency and flux - Section - Ex010
The Bohr radius - Section - Ex011
The MOSFET as a voltage controlled resistor - Section - Ex012
Width calculation of a MOSFET - Section - Ex013
Quantum well energy - Section - Ex014
Donor and acceptor energies - Section - Ex015
Fermi function - Section - Ex016
Fermi and Boltzmann distribution functions - Section - Ex017
Fermi function numeric calculation - Section - Ex018
Effective density of states - Section - Ex019
Intrinsic energy - Section - Ex020
Electron and Hole density calculation - Section - Ex021
Densities and energy levels - Section - Ex022
Non-degenerate semiconductor approximation - Section - Ex023
Compensated material - Section - Ex024
Built-in potential of a p-n diode - Section - Ex025
p-n junction electrostatics - Section - Ex026
p-n junction electrostatics - Section - Ex027
p-n junction electrostatics - Section - Ex028
Parameter extraction from a C-V measurement - Section - Ex029
- Section - Ex0