Examples


Table of Contents - 1 2 3 4 5 6 7 8 9 R S
    Mobility, effective mass and scattering time - Section - Ex001
    Carrier velocity and transit time - Section - Ex002
    Conductivity and resistivity - Section - Ex003
    Resistance, conductivity and carrier density - Section - Ex004
    Mobility due to lattice and impurity scattering - Section - Ex005
    Doping dependence of the mobility - Section - Ex006
    Linear model of the MOSFET - Section - Ex007
    The MOSFET as a voltage controlled resistor - Section - Ex008
    Wavelength of a photon and an electron - Section - Ex009
    Photon energy, frequency and flux - Section - Ex010
    The Bohr radius - Section - Ex011
    The MOSFET as a voltage controlled resistor - Section - Ex012
    Width calculation of a MOSFET - Section - Ex013
    Quantum well energy - Section - Ex014
    Donor and acceptor energies - Section - Ex015
    Fermi function - Section - Ex016
    Fermi and Boltzmann distribution functions - Section - Ex017
    Fermi function numeric calculation - Section - Ex018
    Effective density of states - Section - Ex019
    Intrinsic energy - Section - Ex020
    Electron and Hole density calculation - Section - Ex021
    Densities and energy levels - Section - Ex022
    Non-degenerate semiconductor approximation - Section - Ex023
    Compensated material - Section - Ex024
    Built-in potential of a p-n diode - Section - Ex025
    p-n junction electrostatics - Section - Ex026
    p-n junction electrostatics - Section - Ex027
    p-n junction electrostatics - Section - Ex028
    Parameter extraction from a C-V measurement - Section - Ex029
    - Section - Ex0

© Bart J. Van Zeghbroeck, 1997