Review Questions

Exam #3 Wednesday Nov 26, 1997

1. Neamen 10.29 (a. 14.7, b. 25.7)
2. Neamen 10.34 (a. r_s = 198 Ohm, b. 12% reduction)
3. Neamen 10.36 (a. 3.18 GHz, b. 0.83 GHz)
4. Neamen 4.12
5. Neamen 4.15 (J_diffusion = 5.1 A/cm²)
6. Neamen 5.22 (a. 0.3294 eV, b. 0.3318 eV)
7. Neamen 5.24
8. Neamen 7.10 (N_n = 2.68E3, 1.27E5 and 6.05E6 cm^-3)
9. Neamen 7.12 (@ 200K: 2.21E-21, 3.46E-10, 7.1E-31 A/cm2, @500K: 2.73E-3, 4.92E1, 2.95E-8 A/cm²)
10. Consider the diode of example 7.2 p 250. Find the accepter density which results in a four times larger saturation current density. Repeat the problem for N_d, D_n, D_p, t_n0 and t_p0.
11. Consider the MOSFET of example 10.10 p 467. Find the acceptor density which doubles the threshold shift. Repeat for the oxide thickness.
12. Describe the differences between the quadratic and variable depletion layer model of the MOSFET. How do those differences affect the small signal parameters g_m, g_d, C and f_T