R.7 List of symbols


Table of Contents - 1 2 3 4 5 6 7 8 9 R S ®


aA bB cC dD eE fF gG hH iI jJ kK lL mM nN oO pP qQ rR sS tT uU vV wW xX yY zZ
a b g G d D e z h q Q i k l L m n N x X p P r s S t u f F c y Y w W


Symbol

Description

MKS Units

A

   

a0

Bohr radius - value - 2.1.2.4 - Eq

m

A

Area

m2

B

   

B

Magnetic field

Tesla

C

   

c

Speed of light in vacuum - value

m/s

C

Capacitance

F

CD

Diffusion capacitance per unit area

F/m2

CDS

Drain-source capacitance

F

CFB

Flatband capacitance per unit area of a MOS structure

F/m2

CG

Gate capacitance

F

CGS

Gate-source capacitance

F

CGD

Gate-drain capacitance

F

CHF

High-frequency capacitance per unit area of a MOS structure

F/m2

Cj

Junction capacitance per unit area

F/m2

CLF

Low-frequency (quasi-static) capacitance per unit area of a MOS structure

F/m2

CM

Miller capacitance

F

COX

Oxide capacitance per unit area

F/m2

Cs

Semiconductor capacitance per unit area

F/m2

D

   

Dn

Electron diffusion constant

m2/s

Dp

Hole diffusion constant

m2/s

E

   

E

Energy

Joule

E

Electric Field

V/m

Ea

Acceptor energy

Joule

Ec

Conduction band energy of a semiconductor - 2.2.3.4

Joule

Ed

Donor energy

Joule

EF

Fermi energy - 2.4.7.3 - Eq - Eq

Joule

EF,n

Fermi energy in an n-type semiconductor

Joule

EF,p

Fermi energy in a p-type semiconductor

Joule

Eg

Energy bandgap of a semiconductor - 2.2.3.4 - 2.2.5 - 2.2.6

Joule

Ei

Intrinsic Fermi energy - 2.2.6.2 - Eq - Eq

Joule

Ev

Valence band energy of a semiconductor 2.2.3.4

Joule

f(E)

Distribution function (probability density function) - 2.4 - Fig

 

fBE(E)

Bose-Einstein distribution function - 2.4.4 - Eq

 

fFD(E)

Fermi-Dirac distribution function - 2.4.3 - Fig - Eq

 

fMB(E)

Maxwell-Boltzmann distribution function - 2.4.5 - Eq

 

F

Force

Newton

Fn

Quasi-Fermi energy of electrons

Joule

Fp

Quasi-Fermi energy of holes

Joule

g(E)

Density of states per unit energy and per unit volume - 2.3 - Fig

m-3J-1

gc

Density of states in the conduction band per unit energy and per unit volume - Eq

m-3J-1

gc,3D

3-dimensional density of states in the conduction band per unit energy and per unit volume - Eq

m-3J-1

gc,2D

2-dimensional density of states in the conduction band per unit energy and per unit area - Eq

m-2J-1

gc,1D

1-dimensional density of states in the conduction band per unit energy and per unit length - Eq

m-1J-1

gv

Density of states in the valence band per unit energy and per unit volume - Eq

m-3J-1

gd

Output conductance of a MOSFET - 7.2.4 - Eq - Eq - Eq

S

gm

Transconductance of a MOSFET - 7.2.4 - Eq - Eq - Eq

S

G

Carrier generation rate

m-3s-1

Gh

Hole generation rate

m-3s-1

Gn

Electron generation rate

m-3s-1

h

Planck's constant - value

Js

I

Current

A

ID

Drain current of a MOSFET

A

J

Current density

A/m2

Jn

Electron current density

A/m2

Jp

Hole current density

A/m2

k

Boltzmann's constant - value
wavenumber

J/K

L

Length

m

LD

Debye length

m

Ln

Electron diffusion length

m

Lp

Hole diffusion length

m

m0

Free electron mass - value

kg

     

mn*

Effective mass of electrons - 2.2.3.5

kg

     

mp*

Effective mass of holes - 2.2.3.5

kg

     

M

Proton mass - value

kg

     

n

Electron density - 2.5.4 - Eq - Eq

m-3

     

ni

Intrinsic carrier density

m-3

     

n(E)

Electron density per unit energy and per unit volume - 2.5.4 - Eq

m-3

     

n0

Electron density in thermal equlibrium - Eq

m-3

     

ni

Intrinsic carrier density - 2.5 - Eq

m-3

     

nn

Electron density in an n-type semiconductor

m-3

     

nn0

Thermal equilibrium electron density in an n-type semiconductor

m-3

     

np

Electron density in a p-type semiconductor

m-3

     

np0

Thermal equilibrium electron density in a p-type semiconductor

m-3

     

N

Number of particles

 
     

Na

Acceptor doping density

m-3

     

Na-

Ionized acceptor density

m-3

     

NA

Avogadro's number - value

 
     

NC

Effective density of states in the conduction band - 2.7 - Eq

m-3

     

Nd

Donor doping density

m-3

     

Nd+

Ionized donor density

m-3

     

Nss

Surface state density

m-2

     

Nt

Recombination trap density

m-2

     

NV

Effective density of states in the valence band - 2.7 - Eq

m-3

     

p

Hole density - 2.5.4 - Eq - Eq

m-3

     

p(E)

Hole density per unit energy - 2.5 - Eq

m-3

     

p0

Hole density in thermal equilibrium - Eq

m-3

     

pn

Hole density in an n-type semiconductor

m-3

     

pn0

Thermal equilibrium hole density in an n-type semiconductor

m-3

     

pp

Hole density in a p-type semiconductor

m-3

     

pp0

Thermal equilibrium hole density in a p-type semiconductor

m-3

     

q

electronic charge - value

C

     

Qd

Charge density per unit area in the depletion layer of an MOS structure - 6.5 - Eq

C/m2

     

Qd,T

Charge density per unit area at threshold in the depletion layer of an MOS structure - 6.5 - Eq

C/m2

     

Qi

Interface charge density per unit area

C/m2

     

Qinv

Inversion layer charge density per unit area

C/m2

     

Qss

Surface state charge density per unit area

C/m2

     

R

Resistance

Ohm

R

The Rydberg constant - value

J

Rn

Electron recombination rate

m-3s-1

Rp

Hole recombination rate

m-3s-1

t

Thickness

m

t

Time

s

tox

Oxide thickness

m

T

Temperature

Kelvin

UA

Auger recombination rate

m-3s-1

Ub-b

Band-to-band recombination rate

m-3s-1

USHR

Schockley-Read-Hall recombination rate

m-3s-1

v

Velocity

m/s

vth

Thermal velocity

m/s

V

Voltage

V

Va

Applied voltage

V

VA

Early voltage

V

VB

Base voltage

V

VC

Collector voltage

V

VD

Drain voltage

V

VDS

Drain-source voltage

V

VDS,sat

Drain-source saturation voltage - 7.2.4 - eq.gif7.2.4 - 7.2.5 - Eq

V

VG

Gate voltage

V

Vt

Thermal voltage - value

V

VT

Threshold voltage of an MOS structure - 6.5 - 7.3 - Fig - Eq

V

W

Width

m

xd

Depletion layer width in an MOS structure - 6.5 - Eq

m

xd,T

Depletion layer width in an MOS structure at threshold - 6.5 - Eq

m

xj

Junction depth

m

xn

Depletion layer width in an n-type semiconductor

m

xp

Depletion layer width in a p-type semiconductor

m

a

Absorption coefficient

1/m

 

e0

Permittivity of vacuum - value

F/m

 

eox

Dielectric constant of the oxide

F/m

 

ers

Relative dielectric constant of the semiconductor

F/m

 

es

Dielectric constant of the semiconductor

F/m

m0

Permeability of vacuum - value

H/m

 

mn

Electron mobility

m2/V-s

 

mp

Hole mobility

m2/V-s

 

r

Resistivity - 2.9.2 - Eq

Ohm m

 

r

Charge density per unit volume - 2.7 - Eq

C/m3

 

rox

Charge density per unit volume in the oxide

C/m3

 

r

Conductivity - 2.9.2 - Eq

Ohm m

 

f

Potential

V

 

fB

Barrier height - 3.2 - Eq - Eq

V

 

fF

Bulk potential - 6.5 - Eq

V

 

fi

Built-in potential of a p-n diode (4.3 - Eq)
or Schottky diode (3.2 - Eq - Eq)

V

 

fs

Potential at the semiconductor surface

V

 

FM

Workfunction of the metal

V

 

FS

Workfunction of the semiconductor

V

 

FMS

Workfunction difference between the metal and the semiconductor

V

 

c

Electron affinity of the semiconductor

V

 


© Bart J. Van Zeghbroeck, 1996, 1997