R.7 List of symbols

Table of Contents - 1 2 3 4 5 6 7 8 9 R S ¬ ®

aA bB cC dD eE fF gG hH iI jJ kK lL mM nN oO pP qQ rR sS tT uU vV wW xX yY zZ
a b g G d D e z h q Q i k l L m n N x X p P r s S t u f F c y Y w W

Symbol	Description		MKS Units
A
a₀		Bohr radius - value - 2.1.2.4 - Eq	m
A		Area	m²
B
B		Magnetic field	Tesla
C
c		Speed of light in vacuum - value	m/s
C		Capacitance	F
C_D		Diffusion capacitance per unit area	F/m²
C_DS		Drain-source capacitance	F
C_FB		Flatband capacitance per unit area of a MOS structure	F/m²
C_G		Gate capacitance	F
C_GS		Gate-source capacitance	F
C_GD		Gate-drain capacitance	F
C_HF		High-frequency capacitance per unit area of a MOS structure	F/m²
C_j		Junction capacitance per unit area	F/m²
C_LF		Low-frequency (quasi-static) capacitance per unit area of a MOS structure	F/m²
C_M		Miller capacitance	F
C_OX		Oxide capacitance per unit area	F/m²
C_s		Semiconductor capacitance per unit area	F/m²
D
D_n		Electron diffusion constant	m²/s
D_p		Hole diffusion constant	m²/s
E
E		Energy	Joule
E		Electric Field	V/m
E_a		Acceptor energy	Joule
E_c		Conduction band energy of a semiconductor - 2.2.3.4	Joule
E_d		Donor energy	Joule
E_F		Fermi energy - 2.4.7.3 - Eq - Eq	Joule
E_F,n		Fermi energy in an n-type semiconductor	Joule
E_F,p		Fermi energy in a p-type semiconductor	Joule
E_g		Energy bandgap of a semiconductor - 2.2.3.4 - 2.2.5 - 2.2.6	Joule
E_i		Intrinsic Fermi energy - 2.2.6.2 - Eq - Eq	Joule
E_v		Valence band energy of a semiconductor 2.2.3.4	Joule
f(E)		Distribution function (probability density function) - 2.4 - Fig
f_BE(E)		Bose-Einstein distribution function - 2.4.4 - Eq
f_FD(E)		Fermi-Dirac distribution function - 2.4.3 - Fig - Eq
f_MB(E)		Maxwell-Boltzmann distribution function - 2.4.5 - Eq
F		Force	Newton
F_n		Quasi-Fermi energy of electrons	Joule
F_p		Quasi-Fermi energy of holes	Joule
g(E)		Density of states per unit energy and per unit volume - 2.3 - Fig	m^-3J^-1
g_c		Density of states in the conduction band per unit energy and per unit volume - Eq	m^-3J^-1
g_c,3D		3-dimensional density of states in the conduction band per unit energy and per unit volume - Eq	m^-3J^-1
g_c,2D		2-dimensional density of states in the conduction band per unit energy and per unit area - Eq	m^-2J^-1
g_c,1D		1-dimensional density of states in the conduction band per unit energy and per unit length - Eq	m^-1J^-1
g_v		Density of states in the valence band per unit energy and per unit volume - Eq	m^-3J^-1
g_d		Output conductance of a MOSFET - 7.2.4 - Eq - Eq - Eq	S
g_m		Transconductance of a MOSFET - 7.2.4 - Eq - Eq - Eq	S
G		Carrier generation rate	m^-3s^-1
G_h		Hole generation rate	m^-3s^-1
G_n		Electron generation rate	m^-3s^-1
h		Planck's constant - value	Js
I		Current	A
I_D		Drain current of a MOSFET	A
J		Current density	A/m²
J_n		Electron current density	A/m²
J_p		Hole current density	A/m²
k		Boltzmann's constant - value wavenumber	J/K
L		Length	m
L_D		Debye length	m
L_n		Electron diffusion length	m
L_p		Hole diffusion length	m
m₀		Free electron mass - value	kg

m_n^*		Effective mass of electrons - 2.2.3.5	kg

m_p^*		Effective mass of holes - 2.2.3.5	kg

M		Proton mass - value	kg

n		Electron density - 2.5.4 - Eq - Eq	m^-3

n_i		Intrinsic carrier density	m^-3

n(E)		Electron density per unit energy and per unit volume - 2.5.4 - Eq	m^-3

n₀		Electron density in thermal equlibrium - Eq	m^-3

n_i		Intrinsic carrier density - 2.5 - Eq	m^-3

n_n		Electron density in an n-type semiconductor	m^-3

n_n0		Thermal equilibrium electron density in an n-type semiconductor	m^-3

n_p		Electron density in a p-type semiconductor	m^-3

n_p0		Thermal equilibrium electron density in a p-type semiconductor	m^-3

N		Number of particles

N_a		Acceptor doping density	m^-3

N_a^-		Ionized acceptor density	m^-3

N_A		Avogadro's number - value

N_C		Effective density of states in the conduction band - 2.7 - Eq	m^-3

N_d		Donor doping density	m^-3

N_d⁺		Ionized donor density	m^-3

N_ss		Surface state density	m^-2

N_t		Recombination trap density	m^-2

N_V		Effective density of states in the valence band - 2.7 - Eq	m^-3

p		Hole density - 2.5.4 - Eq - Eq	m^-3

p(E)		Hole density per unit energy - 2.5 - Eq	m^-3

p₀		Hole density in thermal equilibrium - Eq	m^-3

p_n		Hole density in an n-type semiconductor	m^-3

p_n0		Thermal equilibrium hole density in an n-type semiconductor	m^-3

p_p		Hole density in a p-type semiconductor	m^-3

p_p0		Thermal equilibrium hole density in a p-type semiconductor	m^-3

q		electronic charge - value	C

Q_d		Charge density per unit area in the depletion layer of an MOS structure - 6.5 - Eq	C/m²

Q_d,T		Charge density per unit area at threshold in the depletion layer of an MOS structure - 6.5 - Eq	C/m²

Q_i		Interface charge density per unit area	C/m²

Q_inv		Inversion layer charge density per unit area	C/m²

Q_ss		Surface state charge density per unit area	C/m²

R		Resistance	Ohm
R		The Rydberg constant - value	J
R_n		Electron recombination rate	m^-3s^-1
R_p		Hole recombination rate	m^-3s^-1
t		Thickness	m
t		Time	s
t_ox		Oxide thickness	m
T		Temperature	Kelvin
U_A		Auger recombination rate	m^-3s^-1
U_b-b		Band-to-band recombination rate	m^-3s^-1
U_SHR		Schockley-Read-Hall recombination rate	m^-3s^-1
v		Velocity	m/s
v_th		Thermal velocity	m/s
V		Voltage	V
V_a		Applied voltage	V
V_A		Early voltage	V
V_B		Base voltage	V
V_C		Collector voltage	V
V_D		Drain voltage	V
V_DS		Drain-source voltage	V
V_DS,sat		Drain-source saturation voltage - 7.2.4 - eq.gif 7.2.4 - 7.2.5 - Eq	V
V_G		Gate voltage	V
V_t		Thermal voltage - value	V
V_T		Threshold voltage of an MOS structure - 6.5 - 7.3 - Fig - Eq	V
W		Width	m
x_d		Depletion layer width in an MOS structure - 6.5 - Eq	m
x_d,T		Depletion layer width in an MOS structure at threshold - 6.5 - Eq	m
x_j		Junction depth	m
x_n		Depletion layer width in an n-type semiconductor	m
x_p		Depletion layer width in a p-type semiconductor	m

a	Absorption coefficient	1/m
e₀	Permittivity of vacuum - value	F/m
e_ox	Dielectric constant of the oxide	F/m
e_rs	Relative dielectric constant of the semiconductor	F/m
e_s	Dielectric constant of the semiconductor	F/m
m₀	Permeability of vacuum - value	H/m
m_n	Electron mobility	m²/V-s
m_p	Hole mobility	m²/V-s
r	Resistivity - 2.9.2 - Eq	Ohm m
r	Charge density per unit volume - 2.7 - Eq	C/m³
r_ox	Charge density per unit volume in the oxide	C/m³
r	Conductivity - 2.9.2 - Eq	Ohm m
f	Potential	V
f_B	Barrier height - 3.2 - Eq - Eq	V
f_F	Bulk potential - 6.5 - Eq	V
f_i	Built-in potential of a p-n diode (4.3 - Eq) or Schottky diode (3.2 - Eq - Eq)	V
f_s	Potential at the semiconductor surface	V
F_M	Workfunction of the metal	V
F_S	Workfunction of the semiconductor	V
F_MS	Workfunction difference between the metal and the semiconductor	V
c	Electron affinity of the semiconductor	V