This outline will be updated during the semester. The page numbers refer to the textbook.
| Date | Lecture topic | Web book | Text book | HW due | ||
| M | 8/22/2005 | 1 | Introduction | Foreword 1.1 1.2 1.3 1.4 | ||
| W | 8/24/2005 | 2 | Physics of semiconductor materials | 2.1 2.2 | 1-14 | |
| F | 8/26/2005 | 3 | Physics of semiconductor materials | 2.3 | 1-14 | |
| M | 8/29/2005 | 4 | Thermal equilibrium statistics | 2.4 2.5 | 14-26 | |
| W | 8/31/2005 | 5 | Free carriers in semiconductors | 2.6 2.7 | 26-35 | |
| F | 9/2/2005 | 6 | Diffusion of carriers | 2.7 | 35-38 | #1 |
| M | 9/5/2005 | Labor day | ||||
| W | 9/7/2005 | 7 | The Hall effect;Quasi-Ferm energies | 2.7.5 | 38-44 | |
| F | 9/9/2005 | 8 | Silicon Technology; sheet resistance | 55-117 128-134 | #2 | |
| M | 9/12/2005 | 9 | Metal-Semionductor junctions; electrostatic analysis | 3.1 3.2 3.3 | 139-150 | |
| W | 9/14/2005 | 10 | Metal-Semionductor junction current; current derivation | 3.4 | 152-155 158-166 | |
| F | 9/16/2005 | 11 | M-S junction issues; barrier lowering; Schottky diode with an interfacial layer | 3.3.6 | 150-151 | #3 |
| M | 9/19/2005 | 12 | Exact solution Contacts, surface effects and Schottky diodes | 3.5 3.3.7 | 166-169 | |
| W | 9/21/2005 | 13 | MESFETs and HEMTs | 3.6 | 219-221 | |
| F | 9/23/2005 | 14 | p-n Junctions | 174-194 | #4 | |
| M | 9/26/2005 | 15 | Reverse-Biased pn Junctions | 4.5 | 198-212 | |
| W | 9/28/2005 | 16 | The Junction Field-Effect Transistor | 212-219 | ||
| F | 9/30/2005 | 17 | The Continuity Equation | 2.9 | 226-228 | #5 |
| M | 10/3/2005 | 18 | Generation and Recombination of free carriers | 2.8 | 228-238 | |
| W | 10/5/2005 | 19 | Ideal diode current derivation | 4.4.2 | 238-247 | |
| F | 10/7/2005 | 20 | Recombination-Generation current in the depletion region | 4.4.3 4.4.4 | 247-251 | #6 |
| M | 10/10/2005 | 21 | Optoelectronic devices; Light absorption and emission | 4.6 | ||
| W | 10/12/2005 | 22 | Photodiodes and Solar cells | 4.7 4.8 | ||
| F | 10/14/2005 | Fall Break | ||||
| M | 10/17/2005 | 23 | LEDs and laser diodes | 4.9 4.10 | ||
| W | 10/19/2005 | 24 | Review | |||
| F | 10/21/2005 | Midterm exam | ||||
| M | 10/24/2005 | 25 | Bipolar transistor; structure and principle of operation | 5.1 5.2 | 278-296 | |
| W | 10/26/2005 | 26 | The ideal transistor model Lecture taped on Friday at 10am | 5.3 | 296-304 | |
| F | 10/28/2005 | 27 | Non-ideal effects in bipolar transistors | 5.4 | 324-342 | |
| M | 10/31/2005 | 28 | Charge control,model, small signal model | 5.5 5.6 | 342-368 | #7 |
| W | 11/2/2005 | 29 | Bipolar fabrication technology and HBTs and Power Devices | 5.7 5.8 5.9 | 305-320 368-374 | |
| F | 11/4/2005 | 30 | The MOS capacitor: Structure and principle of operation | 6.1 6.2 | 380-390 | #8 |
| M | 11/7/2005 | 31 | MOS Electrostatic analysis | 6.3 | 390-396 | |
| W | 11/9/2005 | 32 | MOS capacitance | 6.3.4 | 396-413 | |
| F | 11/11/2005 | 33 | Exact MOS analysis | 6.5 | #9 | |
| M | 11/14/2005 | 34 | The MOSFET | 7.1 7.2 7.3.1 7.3.2 | 426-430 | |
| W | 11/16/2005 | No Class | ||||
| F | 11/18/2005 | 35 | The variable depletion layer model | 7.3.3 | 431-435 | #10 |
| M | 11/21/2005 | 36 | MOSFET Threshold voltage, The substrate bias effect, SPICE Model | 435-443 | ||
| W | 11/23/2005 | 37 | MOSFET Technology | 446-447 | ||
| F | 11/25/2005 | Thanksgiving | ||||
| M | 11/28/2005 | 38 | MOSFET memory circuits | 447-461 | ||
| W | 11/30/2005 | 39 | CMOS | 461-475 | ||
| F | 12/2/2005 | 40 | Advanced MOSFET issues | #11 | ||
| M | 12/5/2005 | 41 | MOS Power Devices | |||
| W | 12/7/2005 | No lecture | ||||
| M | 12/12/2005 | Final Exam (1:30pm-4:00pm) |