Bart J. Van Zeghbroeck
Selected Publications

• Superconducting electronics
• GaAs MESFETs
• Optoelectronics
• High Temperature Electronics
• Other

• Bart J. Van Zeghbroeck,"Superconducting Current Injection Transistor", Appl. Phys. Lett., Vol. 42, No.8, pp 736-738 (1983).
• P. Wolf, B. J. Van Zeghbroeck and U. Deutsch, "A Josephson Sampler with 2.1ps Resolution", IEEE Trans. Mag., Vol. MAG-21, No.2, pp 226-229 (1985).
• Bart J. Van Zeghbroeck, "Superconducting Current Injection Transistor with very high Critical-Current-Density Edge-Junctions", IEEE Trans. Mag., Vol. MAG-21, No.2, pp 916-919 (1985).
• B. J. Van Zeghbroeck, "Model for a Josephson Sampling Gate", J. Appl. Phys., Vol. 57, No.7, pp 2593-2596 (1985).

• H. Jäckel, V. Graf, B. J. Van Zeghbroeck, P. Vettiger, and P. Wolf, "Scaled GaAs MESFET's with Gate Length Down to 100nm", IEEE Electr. Dev. Lett., Vol. EDL-7, pp 522-524 (1986).
• B. J. Van Zeghbroeck, W. Patrick, H. Meier, and P. Vettiger, "Submicrometer GaAs MESFET with Shallow Channel and Very High Transconductance", IEEE Electron Dev. Lett, Vol. EDL-8, pp 118-120 (1987)
• B. J. Van Zeghbroeck, W. Patrick, H. Meier, and P. Vettiger, "Parasitic Bipolar Effects in Submicrometer GaAs MESFET's", IEEE Electron Dev. Lett, Vol. EDL-8, pp 188-190 (1987).
• T. N. Jackson, B. J. Van Zeghbroeck, G. Pepper, J. F. DeGelormo, T. Keuch, H. Meier, and P. Wolf, "Submicron-gate-length GaAs MESFETs", IBM J. Res. Develop., Vol. 34, p 495-505, 1990
• B. J. Van Zeghbroeck, "Low-temperature behavior of short-channel GaAs MESFETs", Cryogenics Vol. 30, p 1084-1087, December 1990.
• H. Jäckel, V. Graf, B. J. Van Zeghbroeck, P. Vettiger, and P. Wolf, "Ion-Implanted Submicron MESFET's with High Transconductance", Proc. International Symposium on Gallium Arsenide and Related Compounds, Las Vegas, 1986, pp 471-476.
• B. J. Van Zeghbroeck, W. Patrick, H. Meier, P. Vettiger, and P. Wolf "High-Performance GaAs MESFET's", Proc. International Electron Devices Meeting, Los Angeles, pp 832-834, 1986.
• W. Patrick, K. Dätwyler, B. J. Van Zeghbroeck, and P. Vettiger, "Technology for Submicron Recessed-Gate GaAs MESFETs on Thin MBE Layers using Electron Beam Lithography", Proc. 14th Intl. Conf. on GaAs and Related Compounds, Heraklion, Greece, 1987.

• Ch. S. Harder, B. J. Van Zeghbroeck, M. P. Kesler, H. P. Meier, P. Vettiger, D. J. Webb, and P. Wolf, "High-speed GaAs/AlGaAs optoelectronic devices for computer applications", IBM J. Res. Develop., Vol. 34, p 568-584, 1990.
• Y.B. Gigase, Ch.S. Harder, M.P. Kesler, H.P. Meier, and B.J. Van Zeghbroeck, "Threshold reduction through photon recycling in semiconductor lasers", Appl. Phys. Lett., Vol. 57, No. 13, p 1310-1312, Sept. 24. 1990.
• B. Van Zeghbroeck, "Optical data-communication between Josephson-junction circuits and room-temperature electronics", IEEE Trans. Applied Superconductivity, Vol.3, No.1, pp 2881-2884, 1993.
• A.K. Chu, Y. Gigase, H.Y. Lee, M.J. Hafich, G.Y. Robinson and B. Van Zeghbroeck, "Fabrication and characterization of an InGaAs/InP Photon Transport Transistor", IEEE Photonics Technology Letters, Vol. 4, pp. 454-456, April 1993.
• H.C. Lee and B. Van Zeghbroeck, "A Novel High-Speed Silicon MSM Photodetector Operated at 830 nm wavelength", IEEE Electron Device Letters, Vol EDL-16, p 175-177, May,1995.
• A. Sarto and B. Van Zeghbroeck, "Photocurrents in a Metal-Semiconductor-Metal Photodetector", IEEE Journal of Quantum Electronics, Vol. 22, p 2188-2194, Dec. 1997.
• R. Waters, J. Patterson and B. Van Zeghbroeck, "Micro-Mechanical Optoelectronic Switch and Amplifier (MIMOSA)", J. Quantum Electr., Vol. 5, pp 33-35, Jan/Feb 1999.
• B. J. Van Zeghbroeck, Ch. Harder, J-M. Halbout, H. Jäckel, H. Meier, W. Patrick, P. Vettiger, and P. Wolf, "5.2GHz Monolithic GaAs Optoelectronic Receiver, High-Performance GaAs MESFET's", Proc. International Electron Devices Meeting, Washington, 1987, pp 229-232.
• B. J. Van Zeghbroeck, "Analysis of Picosecond and Subpicosecond MSM Photodiodes with Very Low Bias Voltage", Proc. Device Research Conference, Boulder, 1988, p IIB-1.
• B. J. Van Zeghbroeck, Ch. S. Harder, H. P. Meier and W. Walter, "Photon transport transistor", Proc. International Electron Device Meeting, Washington DC, p 543-546, 1989.
• Y. Gigase, Ch. Harder, H. Meier and B. Van Zeghbroeck, "Threshold power reduction of GaAs-AlGaAs Ridge SQW-GRINSCH laser diodes through photon recycling", Presented at the 12th IEEE international semiconductor laser conference, Davos Switzerland, Sept. 1990.
• A. Chu, Y. Gigase and B. Van Zeghbroeck, "Gain collapse in the photon transport transistor (PTT) above lasing threshold", Optical Society of America, Proc. Topical meeting on Picosecond Electronics and Optoelectronics, Salt Lake, UTAH, March 13-15, 1991.
• A. Chu, Y. Gigase and B. J. Van Zeghbroeck, "All-electronic laser diode characterization through integration with a photodiode", Proc. Device Research Conference, June 17-19, Boulder, CO 1991.
• A.K. Chu, Y. Gigase, H.Y. Lee, M.J. Hafich, G.Y. Robinson and B. Van Zeghbroeck, "Fabrication and characterization of an InGaAs/InP Photon Transport Transistor", Proc. IEEE LEOS Summer topical meeting on Integrated Optoelectronics, pp79-80, Santa Barbara, CA, Aug. 1992
• A.K. Chu, H.C. Lee and B. Van Zeghbroeck, "A Novel Multi-functional Optoelectronic Device for Large Scale Integration: a Detector, an Electronic Transistor and a Laser Diode in One", Proc. IEEE/LEOS 1995 Topical Meeting on RF Optoelectronics, Paper FB2, Keystone, CO, Aug. 1995.
• J. Patterson and B. Van Zeghbroeck, "Fabrication and Analysis of Si/SiO₂ Micro-Mechanical Modulators", Proc. IEEE/LEOS 1996 Topical Meeting, Paper FA4, p 65-66, Keystone, CO, August 1996.
• H. C. Lee and B. Van Zeghbroeck, "Metal-Semiconductor-Metal Photodiodes on Textured Silicon Membranes", Proc. Device Research Conference, Paper VIA-2, Boulder, CO, June 1994.
• H. C. Lee and B. Van Zeghbroeck, "Light Trapping Textured Silicon Membranes for Photonic Applications", Proc. Electronic Materials Conference, Paper AE3, Boulder, CO, June 1994.

High Temperature Electronics

• J.T. Torvik, M. Leksono, J. I. Pankove, B. Van Zeghbroeck, H. M. Ng and T.D. Moustakas, "Electrical characterization of GaN/SiC n-p heterojunction diodes", Appl. Phys. Lett., Volt. 72, p 1371 - 1373, Mar. 1998.
• R. Waters and B. Van Zeghbroeck, "Fowler-Nordheim tunneling of holes through thermally SiO₂ on p⁺ 6H-SiC", Applied Physics Letters, Vol. 73, pp 3692-3694, Dec 1998.
• J. Pankove, S. S. Chang, H. C. Lee , R. J. Molnar, T. D. Moustakas and B. Van Zeghbroeck, "High-Temperature GaN/SiC Heterojunction Bipolar Transistor with High Gain", Proc. International Electron Devices Meeting, p 389-392, San Francisco, CA, Dec. 1994.
• S. S. Chang, J. Pankove, M. Leksono and B. Van Zeghbroeck, "500° C operation of a GaN/SiC Heterojunction Bipolar Transistor", Proc. Device Research Conf, Paper IVB-5, Charlottesville, VA, June 1995.

• P. Vettiger, P. Buchmann, K. Dätwyler, G. Sasso, and B. J. Van Zeghbroeck, "Nanometer sidewall lithography by resist silylation", J. Vac. Sci. Technol., Vol. B7, p 1756-1759, 1989.
• D.J. Blumenthal, J.R. Sauer, H. Lee, and B. Van Zeghbroeck, "A Packet-rate real-time reconfigurable photonic switch for computer interconnects", Proc. IEEE LEOS Summer topical meeting on Optical Multiple Access Networks, pp11-12, Santa Barbara, CA, Aug. 1992.
• H. F. Jordan, A. R. Michelson, B. Van Zeghbroeck and I. Januar, "An integrated Optics Stored Program Computer", Invited paper OFC1, Proc. Topical Meeting on Optical Computing, 1993.